Infineon IR21362SPBF

Tube IR21362SPBF Half-Bridge 2006 gate driver 190ns -40C~150C TJ 200mA 350mA 1.6W
$ 3.72
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour Infineon IR21362SPBF.

IHS

Datasheet36 pagesIl y a 17 ans
Datasheet36 pagesIl y a 17 ans

SHENGYU ELECTRONICS

Newark

RS (Formerly Allied Electronics)

iiiC

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date2019-04-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2012-11-04
LTD Date2013-05-04

Pièces détachées

Tape & Reel (TR) IR21362SPBF Half-Bridge 2005 gate driver 190ns 125C 200mA 350mA 1.6W
InfineonIRS2332SPBF
Tube IRS2332SPBF Half-Bridge 1996 gate driver 125ns -40C~150C TJ 250mA 500mA 1.6W
InfineonIRS2330SPBF
Tube IRS2330SPBF Half-Bridge 1996 gate driver 80ns -40C~150C TJ 250mA 500mA 1.6W
3-Phase 10 V - 20 V 350mA / 650mA SMT Half Bridge Gate Driver IC - SOIC20
IC GATE DRVR HALF-BRIDGE 28SOIC / 3-Phase Half-Bridge Gate-Drive IC
MOSFET and Power Driver 650mA 6-OUT Hi/Lo Side Non-Inverting 28-Pin SOIC T/R

Descriptions

Descriptions de Infineon IR21362SPBF fournies par ses distributeurs.

Tube IR21362SPBF Half-Bridge 2006 gate driver 190ns -40C~150C TJ 200mA 350mA 1.6W
Driver 600V 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin SOIC W / IC DRIVER BRIDGE 3PHASE 28SOIC
MOSFET Driver IC; Device Type:Bridge; Supply Voltage Min:12V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:28-SOIC; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:50ns ;RoHS Compliant: Yes
DRIVER, MOSFET, 3PH HIGH/LOW, 21362; Device Type:MOSFET; Module Configuration:3-Phase Bridge; Peak Output Current:350mA; Output Resistance:50ohm; Input Delay:425ns; Output Delay:400ns; Supply Voltage Range:11.5V to 20V; Driver Case Style:SOIC; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:21362; IC Generic Number:21362; Logic Function Number:21362; No. of Outputs:6; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Current + Max:250mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:12V; Package / Case:SOIC; Power Dissipation Pd:1.6W; Supply Voltage Max:20V; Supply Voltage Min:11.5V; Termination Type:SMD; Voltage Vcc Max:25V; Voltage Vcc Min:12V
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.

Alias du fabricant

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