Infineon IPD80R1K0CEATMA1
$ 0.607
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | IPD80R1K0CEATMA1 | 2 500 | 2500 | Tape & Reel | ||||||||
| Rutronik | TMOS1439 | 2 500 | 2500 | 3h | ||||||||
| Rochester Electronics | IPD80R1K0CEATMA1 | 22 500 | 20h | |||||||||
| RS (Formerly Allied Electronics) | IPD80R1K0CEATMA1 | 10 | 1 | Bulk | 13h | |||||||
| DigiKey | IPD80R1K0CEATMA1CT-ND | 4 234 | 1 | Cut Tape |
Historique des stocks
Tendance sur 3 mois : +2.63%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Modèles CAO
Téléchargez les symboles Infineon IPD80R1K0CEATMA1, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | Empreinte | Télécharger | |
 Ultra Librarian | SymboleEmpreinte | Télécharger |
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Chaîne d'approvisionnement
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusProduction (Last Updated: 4 months ago)
Pièces détachées
InfineonSPD06N80C3ATMA1
Power MOSFET, N Channel, 800 V, 6 A, 0.78 ohm, TO-252 (DPAK), Surface Mount
InfineonSPD06N60C3ATMA1
Power MOSFET, N Channel, 650 V, 6.2 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
STMicroelectronicsSTD11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
VishaySIHD6N62E-GE3
78W(Tc) 30V 4V@ 250¦ÌA 34nC@ 10 V 1N 620V 900m¦¸@ 3A,10V 6A 578pF@100V TO-252AA 2.38mm
Descriptions
Descriptions de Infineon IPD80R1K0CEATMA1 fournies par ses distributeurs.
TRANSISTOR, MOSFET, 800V COOLMOS CE POWER, N-CHANNEL, 800V, 18A, TO252
N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 800V, 5.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.7A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : +2.63%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance785 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance950 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max950 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Déclarations de conformité