Descriptions de Infineon IPA90R340C3XKSA2 fournies par ses distributeurs.
MOSFET N-CH 900V 15A TO220-FP / N-Channel 900 V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP
Power Transistor MOSFET N-Channel Enhancement 900V 15A 3-Pin TO-220FP
Avnet Japan
Power MOSFET, N Channel, 900 V, 15 A, 0.28 ohm, TO-220FP, Through Hole
35W(Tc) 20V 3.5V@1mA 94nC@ 10 V 1N 900V 340m¦¸@ 9.2A,10V 15A 2.4nF@100V TO-220-3
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.9pF 50volts C0G +/-0.5pF
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N Channel, 900V, 15A, To-220-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon IPA90R340C3XKSA1
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:900V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:15A; Package / Case:TO-220; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting