Infineon IPA60R800CEXKSA1

MOSFET N-CH 600V TO-220-3 / Trans MOSFET N-CH 600V 5.6A 3-Pin(3+Tab) TO-220FP Tube
Obsolete
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour Infineon IPA60R800CEXKSA1.

IHS

Datasheet16 pagesIl y a 0 an

TME

Chaîne d'approvisionnement

Lifecycle StatusObsolete (Last Updated: 5 months ago)

Pièces détachées

Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
CoolMOS CE Series N-Channel 500 V 4.1 A (Tc) 26.4 W (Tc) MOSFET - PG-TO220-FP
STMicroelectronicsSTF9N60M2
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTF7N60M2
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTP7N60M2
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
CoolMOS CE Series N-Channel 600 V 6.8 A (Tc) 26 W (Tc) MOSFET - PG-TO220-FP

Descriptions

Descriptions de Infineon IPA60R800CEXKSA1 fournies par ses distributeurs.

MOSFET N-CH 600V TO-220-3 / Trans MOSFET N-CH 600V 5.6A 3-Pin(3+Tab) TO-220FP Tube
N-Channel 600 V 5.6 A 800 mO 17.2 nC CoolMOS CE Power Transistor - TO-220FP, PG-TO220-3, RoHS
Infineon SCT
Mosfet, N-Ch, 600V, 8.4A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

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