Infineon IKW15T120FKSA1

GRM Series 0402 3.5 pF 50 V ±0.25 pF C0G/NP0 SMT Multilayer Ceramic Capacitor

Trans IGBT Chip N-CH 1200V 30A 110mW Automotive 3-Pin(3+Tab) TO-247 Tube

IGBT, N, 1200V, 15A, TO-247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 110W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pi

IGBT, N, 1200V, 15A, TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.2V; Power Dissipation:110W; Case Style:TO-247; Termination Type:Through ;RoHS Compliant: Yes

The 1200 V, 15 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications