Infineon IGW40T120FKSA1

Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
Obsolete
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IHS

Datasheet13 pagesIl y a 14 ans
Datasheet13 pagesIl y a 14 ans

Burklin Elektronik

TME

iiiC

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-01-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-08-15
LTD Date2025-02-15

Pièces détachées

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Trans IGBT Chip N-CH 1200V 120A 384000mW 3-Pin(3+Tab) TO-247 Tube
LittelfuseIXGH32N120A3
Trans IGBT Chip N-CH 1200V 75A 300000mW 3-Pin(3+Tab) TO-247AD
Igbt Mos 8 1200 V 25 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT25GR120BD15
InfineonIRG4PH50SPBF
IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC

Descriptions

Descriptions de Infineon IGW40T120FKSA1 fournies par ses distributeurs.

Infineon IGW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
IGBT,1200V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:270W
Infineon's 1200 V, 40 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
Infineon SCT
Configuration = Single / Continuous Collector Current (Ic) A = 40 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 600 / Power Dissipation (Pd) W = 270 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

Alias du fabricant

Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias de numéro de pièce

Ce composant peut être référencé sous ces autres numéros :

  • IGW40T120
  • SP000013886