Infineon AUIRF7207Q
$ 1.742
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRF7207Q | 0 | 125 | Bulk | 11h | |||||||
| Farnell | AUIRF7207Q | 0 | 1 | 5h | ||||||||
| Win Source | WS-AUIRF7207QTR | 20 | 70 | 19h | ||||||||
| Worldway Electronics | AUIRF7207Q | 28 849 | 7 | 2d | ||||||||
| UnikeyIC | AUIRF7207QTR | 2 385 | 510 | Tape & Reel | 18h |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-10-28
LTD Date2015-04-28
Pièces détachées
InfineonIRF7314TRPBF
MOSFET, Power;Dual P-Ch;VDSS -20V;RDS(ON) 0.058Ohm;ID -5.3A;SO-8;PD 2W;VGS +/-12
InfineonIRF7204TRPBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS +/-12V
InfineonIRF7204PBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS +/-12V
Descriptions
Descriptions de Infineon AUIRF7207Q fournies par ses distributeurs.
Trans MOSFET P-CH Si 20V 5.4A Automotive 8-Pin SOIC T/R
Automotive Q101 -20V Single P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS
Infineon SCT
P CH MOSFET, AUTOMOTIVE, -20V, -5.4A, SOIC-8, FULL REEL
MOSFET P-Channel 20V 5.4A HEXFET SOIC8
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
MOSFET, P CH, 20V, 5.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-2.7V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Fall Time41 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance780 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max60 mΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage-700 mV
Turn-Off Delay Time43 ns
Turn-On Delay Time11 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformité
Classification environnementale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité