onsemi HGTP12N60A4

600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
$ 0.702
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DistributorSKUMinPkg
Rochester ElectronicsHGTP12N60A4228
6h
Win SourceWS-HGTP12N60A45 2009
7h
LixincHGTP12N60A418 736
3d
SHENGYU ELECTRONICSHGTP12N60A410 0611
4d
QUARKTWIN TECHNOLOGY LTD
2
HGTP12N60A4Contact
>1wk

Fiches techniques et documents

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IHS

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Farnell

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-05-01
Lifecycle StatusProduction (Last Updated: 2 months ago)

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Descriptions

Descriptions de onsemi HGTP12N60A4 fournies par ses distributeurs.

600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
Win Source
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
Newark
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:18ns; Time, Rise:8ns; Transistors, No. of:1
Farnell

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Farnell
Rochester Electronics

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