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Diodes Inc. ZTX849

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
$ 0.58
EOL
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour Diodes Inc. ZTX849.

IHS

Datasheet3 pagesIl y a 19 ans

Diodes Inc SCT

Future Electronics

iiiC

Historique des stocks

Tendance sur 3 mois:
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Pièces de rechange

Ce composant
Pièces de rechange
Price @ 1000
$ 0.58
$ 0.574
Stock
406,694
77,791
Authorized Distributors
4
4
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
5 A
5 A
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
220 mV
220 mV
hFE Min
30
30
Power Dissipation
1.2 W
1.2 W

Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-10-28
LTD Date2027-04-28

Pièces détachées

Diodes Inc.ZTX849STZ
Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Diodes Inc.ZTX869
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
30V 1W 2A 120MHz 2V@1.5A30mA NPN +150¡Í@(Tj) TO-92-3LF Bipolar Transistors - BJT ROHS
onsemiKSP13BU
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-92
Transistor, bjt, npn,30V V(Br)Ceo,1A I(C),to-92 Rohs Compliant: Yes |Onsemi KSD471ACYBU
Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW Through Hole TO-92-3

Descriptions

Descriptions de Diodes Inc. ZTX849 fournies par ses distributeurs.

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ZTX849 Series NPN 5 A 30 V Silicon Planar Medium Power Transistor - TO-92-3
TRANSISTOR NPN 30V 5000MA TO92-3
220mV@ 200mA,5A NPN 1.2W 6V 50nA 80V 30V 5A EP-3SC , 4.77mm*2.41mm*4.01mm
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.2W; DC Collector Current:5A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:220mV; Continuous Collector Current Ic Max:5A; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:20A; Termination Type:Through Hole; Voltage Vcbo:80V

Alias du fabricant

Diodes Inc. possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Diodes Inc. peut également être connu sous les noms suivants :

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated