STMicroelectronics STGD5NB120SZT4
NRND
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Especificaciones técnicas
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Max Breakdown Voltage1.2 kV
Max Collector Current10 A
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-55 °C
PackagingDigi-Reel®
Power Dissipation55 W
Rise Time170 ns
Schedule B8541290080
Turn-Off Delay Time12.1 µs
Turn-On Delay Time690 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STGD5NB120SZT4.
Componentes relacionados
onsemiHGTD1N120BNS9A
Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R
onsemiISL9V2040D3ST
Trans IGBT Chip N=-CH 390V 10A 130000mW Automotive 3-Pin(2+Tab) DPAK T/R
onsemiNGTB03N60R2DT4G
Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R
Descripciones
Descripciones de STMicroelectronics STGD5NB120SZT4 suministradas por sus distribuidores.
Trans IGBT Chip N-CH 1200V 10A 75000mW 3-Pin(2+Tab) DPAK T/R
STGD5NB120SZ Series 1200 V 10 A Low Drop Internally Clamped IGBT - TO-252-3
IGBT, 1.3V, 10A, TO-252-3; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Transistor Type: IGBT
Alias de fabricantes
STMicroelectronics tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. STMicroelectronics también podría ser conocido por los siguientes nombres:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificaciones técnicas
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Max Breakdown Voltage1.2 kV
Max Collector Current10 A
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Operating Temperature-55 °C
PackagingDigi-Reel®
Power Dissipation55 W
Rise Time170 ns
Schedule B8541290080
Turn-Off Delay Time12.1 µs
Turn-On Delay Time690 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant