Vishay SI7611DN-T1-GE3
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-9.3 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-40 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.98 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Operating Temperature-50 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time30 ns
Turn-On Delay Time10 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Inventory History
3 month trend: -6.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7611DN-T1-GE3.
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Descripciones
Descripciones de Vishay SI7611DN-T1-GE3 suministradas por sus distribuidores.
P-Channel 40 V 0.025 Ohm 39 W Surface Mount Power Mosfet - PowerPAK-1212-8
Transistor MOSFET P-CH 40V 9.3A 8-Pin PowerPAK 1212 T/R
P Channel Mosfet, -40V, 18A, Powerpak, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.021Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -6.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-9.3 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-40 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.98 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Operating Temperature-50 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time30 ns
Turn-On Delay Time10 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Declaraciones de cumplimiento