Vishay SI2304DDS-T1-GE3
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI2304DDS-GE3 | 95.386 | 1 | Tape & Reel | 22h | ||||||||
| 23T8495 | 445 | 1 | 1d | |||||||||
| SI2304DDS-T1-GE3 | 75.000 | 3K | 1d | |||||||||
| SI2304DDS-T1-GE3 | 1507 | 1 | Cut Tape | 1d | ||||||||
| SI2304DDS-T1-GE3CT-ND | 48.808 | 1 | Cut Tape | 1d |
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance49 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance35 pF
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.2 V
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1.1 W
Rds On Max850 mΩ
Resistance60 mΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage2.2 V
Turn-Off Delay Time12 ns
Turn-On Delay Time12 ns
Inventory History
3 month trend: -8.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Descargar fichas técnicas y documentación del fabricante para Vishay SI2304DDS-T1-GE3.
Farnell
element14 APAC
Future Electronics
TME
RS (Formerly Allied Electronics)
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2304DDS-T1-GE3.
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VishaySI2347DS-T1-GE3
P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3
Descripciones
Descripciones de Vishay SI2304DDS-T1-GE3 suministradas por sus distribuidores.
Single N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3
Transistor, MOSFET, N-ch, 30V(d-s), 3.3A, SOT23-3, SMD
Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET,N CH,30V,3.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.3A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V
N Channel Mosfet, 30V, 3.6A, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V Rohs Compliant: No |Vishay SI2304DDS-T1-GE3.
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -8.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance49 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance35 pF
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.2 V
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1.1 W
Rds On Max850 mΩ
Resistance60 mΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage2.2 V
Turn-Off Delay Time12 ns
Turn-On Delay Time12 ns
Documentos
Descargar fichas técnicas y documentación del fabricante para Vishay SI2304DDS-T1-GE3.
Farnell
element14 APAC
Future Electronics
TME
RS (Formerly Allied Electronics)
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento