Vishay SIR468DP-T1-GE3
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Vishay SIR468DP-T1-GE3.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-02-26
LTD Date2019-08-26
Componentes relacionados
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VishaySIR462DP-T1-GE3
Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8
VishaySIR466DP-T1-GE3
Single N-Channel 30 V 3.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
Descripciones
Descripciones de Vishay SIR468DP-T1-GE3 suministradas por sus distribuidores.
Single N-Channel 30 V 0.0057 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO EP T/R
30V 40A 50W 5.7m´Î@10V20A 3V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
Power Field-Effect Transistor, 22.7A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IC MCU 16BIT 128KB FLASH 100LQFP
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:40000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0076ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 40A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)22.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.72 nF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max5.7 mΩ
Resistance5.7 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time25 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Vishay SIR468DP-T1-GE3.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento