Vishay SI4686DY-T1-GE3
$ 0.711
NRND
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SI4686DY-T1-GE3CT-ND | 6013 | 1 | Cut Tape | ||||||||
| TME | SI4686DY-T1-GE3 | 0 | 2500 | 19h | ||||||||
| TTI | SI4686DY-T1-GE3 | 0 | 2500 | Tape & Reel | 23h | |||||||
| Newark | SI4686DY-T1-GE3 | 0 | 2500 | Cut Tape | ||||||||
| Avnet | SI4686DY-T1-GE3 | 0 | 2500 | 23h |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.711
$ 0.637
Stock
192,729
238,623
Authorized Distributors
5
6
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
13.8 A
13.8 A
Threshold Voltage
-
1 V
Rds On Max
9.5 mΩ
9.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3 W
3 W
Input Capacitance
1.22 nF
1.22 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-15
Lifecycle StatusNRND (Last Updated: 4 months ago)
Componentes relacionados
Descripciones
Descripciones de Vishay SI4686DY-T1-GE3 suministradas por sus distribuidores.
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
N CHANNEL MOSFET, 30V, 18.2A, SOIC
Small Signal Field-Effect Transistor, 13.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET SO8S N 0.0144R 30V 13A~NH4219262
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)13.8 A
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.22 nF
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max9.5 mΩ
Rise Time20 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento