Vishay SI2316BDS-T1-GE3
$ 0.438
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SI2316BDS-T1-GE3 | 0 | 1 | 4h | ||||||||
| Newark | SI2316BDS-T1-GE3 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | SI2316BDS-T1-GE3 | 0 | 3K | 9h | ||||||||
| TTI Asia | SI2316BDS-T1-GE3 | Contacto | 10h | |||||||||
| Component Stockers USA | SI2316BDS-T1-GE3 | 42.805 | >1wk |
Modelos CAD
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Componentes alternativos
Este componente
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Price @ 1000
$ 0.438
$ 0.272
Stock
78,939
238,789
Authorized Distributors
4
4
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
4.5 A
4.5 A
Threshold Voltage
3 V
-
Rds On Max
50 mΩ
80 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
-
1.25 W
Input Capacitance
350 pF
350 pF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Componentes relacionados
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ZXMN3A14 Series 30 V 0.065 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
Diodes Inc.ZXMN3B14FTA
N-Channel 30 V 0.08 Ohm Surface Mount Enhancement Mode MOSFET - SOT-23
Descripciones
Descripciones de Vishay SI2316BDS-T1-GE3 suministradas por sus distribuidores.
Si2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236
Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
MOSFET Devices; VISHAY; SI2316BDS-T1-GE3; 30 V; 4.5 A; 20 V; 11 ns
N CHANNEL MOSFET, 30V, 4.5A, TO-236
MOSFET 30V 4.5A 1.66W 50mohm @ 10V
1.25W(Ta),1.66W(Tc) 20V 3V@ 250¦ÌA 9.6nC@ 10 V 1N 30V 50m¦¸@ 3.9A,10V 4.5A 350pF@15V SOT-23-3,TO-236 2.9mm*1.6mm*1.45mm
Power Field-Effect Transistor, 4.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
N CHANNEL MOSFET, 30V, 4.5A, TO-236; Tra; N CHANNEL MOSFET, 30V, 4.5A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Especificaciones técnicas
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation1.66 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max50 mΩ
Resistance50 MΩ
Rise Time65 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time11 ns
Turn-On Delay Time20 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento