STMicroelectronics 2N2905A
$ 0.86
Obsolete
Precio y existencias
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Price @ 1000
$ 0.86
$ 10.528
$ 10.528
Stock
81,600
30,524
30,524
Authorized Distributors
4
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220
TO-39
TO-39
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-60 V
60 V
60 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
200 MHz
-
-
Collector Emitter Saturation Voltage
1.6 V
1.6 V
1.6 V
hFE Min
50
100
100
Power Dissipation
3 W
800 mW
800 mW
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-12-17
LTD Date2014-06-17
Componentes relacionados
MicrochipJANTX2N2905A
2N2905A Series 60 V 600 mA Through Hole PNP Switching Transistor - TO-39-3
Descripciones
Descripciones de STMicroelectronics 2N2905A suministradas por sus distribuidores.
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
2N2905A Series PNP 60 V 600 mA 0.6 W Through Hole Switching Transistor - TO-39-3
PNP TRANSISTOR; TO-39; -60VCE; -60VBE; -5VEB; -0.6A ICC; 0.6W; +175C
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:40V; DC Current Gain Min (hfe):40; Package/Case:TO-39; Collector Current @ hfe:1.5A; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-39; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:600mW; DC Collector Current:600mA; DC Current Gain hFE:120; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:400mV; Continuous Collector Current Ic Max:600mA; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic Fall Time Measurement:150mA; Current Ic hFE:150mA; Fall Time @ Ic:30ns; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:600mW; Power Dissipation Ptot Max:600mW; Termination Type:Through Hole; Voltage Vcbo:60V
Alias de fabricantes
STMicroelectronics tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. STMicroelectronics también podría ser conocido por los siguientes nombres:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Especificaciones técnicas
Physical
Body MaterialMetal
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-60 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)60 V
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min50
Max Collector Current600 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation600 mW
Manufacturer Package IdentifierTO39-P008B
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation3 W
Transition Frequency200 MHz
Voltage Rating (DC)-60 V
Dimensions
Diameter9.4 mm
Height6.6 mm
Length9.4 mm
Width9.4 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant