Renesas HIP2103FRTAAZ-T

Half Bridge MOSFET 1A 4.5V~14V 1A DFN-8-EP(3x3) Gate Drive ICs ROHS
$ 1.555
Production

Precio y existencias

Documentos

Descargar fichas técnicas y documentación del fabricante para Renesas HIP2103FRTAAZ-T.

IHS

Datasheet31 páginasHace 7 años
Datasheet21 páginasHace 15 años

Integrated Device Technology

Renesas

Newark

Modelos CAD

Información del modelo
Suministrado porRenesas
Fecha de lanzamientoAug 13, 2025
Conforme con IPCIPC-7351B
Revisión de la guía de estiloVersión 1.0 - Nov 1, 2024
Fuente de la ficha técnicaVersión 2.0 - Feb 25, 2021
Verificación

Componentes alternativos

Este componente
Componentes alternativos
Price @ 1000
$ 1.555
$ 1.339
Stock
674,151
305,131
Authorized Distributors
3
6
Case/Package
DFN
DFN
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
1 A
1 A
Rise Time
21 ns
21 ns
Fall Time
17 ns
17 ns
Min Supply Voltage
4.5 V
4.5 V
Max Supply Voltage
14 V
14 V
Max Power Dissipation
550 mW
550 mW

Cadena de suministros

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8540000000
Introduction Date2014-04-02
Lifecycle StatusProduction (Last Updated: 2 months ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)

Descripciones

Descripciones de Renesas HIP2103FRTAAZ-T suministradas por sus distribuidores.

Half Bridge MOSFET 1A 4.5V~14V 1A DFN-8-EP(3x3) Gate Drive ICs ROHS
60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO
Half Bridge Driver, 3 Phase Dc Brushless, Tdfn8, Full Reel
RoHS Compliant Matte Tin (Sn) - annealed e3 Surface Mount IC Gate Driver 50.008559mg 60V 2.3W 200mA
MOTOR DRIVER, TDFN-8, -40 TO 125DEG C;
Half Bridge Based MOSFET Driver
IC GATE DRVR HALF-BRIDGE 8TDFN
The HIP2103 is a half-bridge driver designed for applications using DC motors, 3-phase brushless DC motors, or other similar loads. The two inputs (HI and LI) independently control the high-side driver (HO) and the low-side driver (LO). HI and LI can be configured to enable/disable the device, which lowers the number of connections to a microcontroller and the cost. The low IDD bias current in the Sleep mode prevents battery drain when the device is not in use, which eliminates the need for an external switch to disconnect the driver from the battery. Integrated pull-down resistors on all of the inputs (LI, HI, VDen, and VCen) reduce the need for external resistors. An active-low resistance pull-down on the LO output ensures that the low-side bridge FET remains off during the Sleep mode or when VDD is below the Undervoltage Lockout (UVLO) threshold.

Alias de fabricantes

Renesas tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Renesas también podría ser conocido por los siguientes nombres:

  • Renesas Electronics
  • Renesas Electronics America Inc
  • Renesas Electronics America
  • RENESA
  • REN
  • RENES
  • RENESAS TECHNOLOGY CORP
  • RENESAS TECHNOLOGY
  • Renesas Electronics Corporation
  • RENESAS ELECTRONICS CORP
  • RENSAS
  • RENASAS
  • Renesas / Intersil
  • RNS
  • RENESAS-PB
  • RENESASTEC
  • RENESES
  • Renesas Technology America
  • Renesas Design Germany GmbH
  • Renesas / IDT
  • RENESASE
  • RENESAS TECHNOLOGY HONG KONG
  • Renesas Electronics Operations Services Limited
  • RENEASAS
  • RENESAS/M