onsemi RFP50N06
$ 1.05
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +12.41%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
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Price @ 1000
$ 1.05
$ 1.05
Stock
250,114
31,245
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
60 V
-
Continuous Drain Current (ID)
50 A
50 A
Threshold Voltage
4 V
-
Rds On Max
22 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
131 W
131 W
Input Capacitance
2.02 nF
-
Cadena de suministros
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi RFP50N06 suministradas por sus distribuidores.
Transistor RFP50N06 N-Channel MOSFET 60 Volt 50 Amp TO-220AB
N-Channel 60 V 0.022 Ohm Flange Mount Power Mosfet - TO-220AB
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB
N-Channel Power MOSFET 60V, 50A, 22mΩ
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:131W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Current Temperature:25°C; Device Marking:RFP50N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:22mohm; Package / Case:TO-220AB; Power Dissipation Pd:131W; Power Dissipation Pd:131W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +12.41%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)50 A
Current Rating50 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.02 nF
Max Operating Temperature175 °C
Max Power Dissipation131 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation131 W
Rds On Max22 mΩ
Resistance22 mΩ
Rise Time55 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time37 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento