onsemi NTR4003NT1G
$ 0.065
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 58M9926 | 32.167 | 1 | 17h | ||||||||
| Newark | NTR4003NT1G | 32.167 | 1 | Cut Tape | ||||||||
| Arrow Electronics | NTR4003NT1G | 33.765 | 1 | |||||||||
| Verical | NTR4003NT1G | 33.765 | 179 | |||||||||
| Future Electronics | NTR4003NT1G | 498.000 | 3K | Tape & Reel |
Historial de existencias
Tendencia de 3 meses: -2.70%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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Este componente
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Price @ 1000
$ 0.065
$ 0.065
Stock
21,710,079
7,053,037
Authorized Distributors
6
6
Mount
-
-
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
500 mA
500 mA
Threshold Voltage
1.4 V
800 mV
Rds On Max
1.5 Ω
1.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
690 mW
690 mW
Input Capacitance
21 pF
21 pF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi NTR4003NT1G suministradas por sus distribuidores.
NTR4003N: Small Signal MOSFET 30V 560mA 1.5 Ohm Single N-Channel SOT-23
NTR4003NT1G N-CHANNEL MOSFET TRANSISTOR, 0.56 A, 30 V, 3-PIN SOT-23
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69 W Silicon SMT Mosfet - SOT-23
MOSFET N-CH 30V 500MA SOT-23 / Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount
MOSFET-Single, N-Channel, Small Signal, SOT-23 Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
NFET SOT23 30V .56A 1500M; Transistor Polarity: N Channel; Continuous Drain Current Id: 560µA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Diss
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:560mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:830mW; No. of Pins:3Pins RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 560 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 64.2 / Rise Time ns = 47.9 / Turn-OFF Delay Time ns = 65.1 / Turn-ON Delay Time ns = 16.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 690
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -2.70%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time47.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation690 mW
Rds On Max1.5 Ω
Resistance1 Ω
Rise Time47.9 ns
Schedule B8541210080
Threshold Voltage1.4 V
Turn-Off Delay Time65.1 ns
Turn-On Delay Time16.7 ns
Dimensions
Height1.1 mm
Length3.04 mm
Width1.4 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi NTR4003NT1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento