onsemi MUN5312DW1T1G
$ 0.057
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -7.44%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
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Price @ 1000
$ 0.057
$ 0.06
Stock
8,566,775
1,190,903
Authorized Distributors
6
6
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Polarity
NPN
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
60
60
Power Dissipation
-
187 mW
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
onsemiMUN5330DW1T1G
ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
Descripciones
Descripciones de onsemi MUN5312DW1T1G suministradas por sus distribuidores.
MUN Series 50 V 100 mA 22 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN5312DW1T1G NPN+PNP DIGI TRANSISTOR,100MA 50V 22 KOHM, RATIO OF 1,6-PIN SC-88
60@5mA,10V 1 NPN - Pre-Biased,1 PNP - Pre-Biased 187mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Complementary Bipolar Digital Transistor (BRT)
BRT TRANSISTOR, AEC-Q101, 50V, 22K/22K; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resis
Brt Transistor, 50V, 22K/22Kohm, Sot-363, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5312DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -7.44%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min60
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
PolarityNPN
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN5312DW1T1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento