onsemi MUN5115DW1T1G
$ 0.063
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5115DW1T1G | 18.000 | 24K | 1d | ||||||||
| Verical | MUN5115DW1T1G | 12.000 | 9678 | |||||||||
| Rochester Electronics | MUN5115DW1T1G | 16.666 | 6h | |||||||||
| Newark | MUN5115DW1T1G | 0 | 9K | Cut Tape | ||||||||
| Onlinecomponents.com | MUN5115DW1T1G | 0 | 3K | Bulk |
Historial de existencias
Tendencia de 3 meses: -3.38%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN5115DW1T1G.
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.063
$ 0.048
$ 0.048
Stock
3,620,641
391,772
391,772
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-363-6
SOT-363-6
SOT-363-6
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
-
250 mV
250 mV
hFE Min
160
160
160
Power Dissipation
250 mW
-
-
Cadena de suministros
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
onsemiMUN5316DW1T1G
MUN Series 50 V 100 mA 4.7 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
onsemiMUN5315DW1T1G
MUN Series 50 V 100 mA 10 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
onsemiMUN5111DW1T1G
Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Descripciones
Descripciones de onsemi MUN5115DW1T1G suministradas por sus distribuidores.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Dual PNP Bipolar Digital Transistor (BRT)
250mV@ 1mA,10mA 2 PNP - Pre-Biased (Dual) 385mW 500nA 50V 100mA SC-88-6 2mm*1.25mm*900¦Ìm
Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual PNP
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
10kO, 8 kO Dual PNP Bias Resistor Transistors (BRT) 10kO, 8 kO Dual PNP BRT - Consumer/Industrial Qualified. ONSSPCTRNSTME1D1N;
Brt Transistor, 50V, 10Kohm, Sc88, Full Reel; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5115DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -3.38%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-363-6
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-100 mA
Current Rating-100 mA
Element ConfigurationDual
hFE Min160
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityPNP
Power Dissipation250 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN5115DW1T1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento