onsemi MUN5113DW1T1G
$ 0.063
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | MUN5113DW1T1G | 101 | 21h | |||||||||
| DigiKey | 488-MUN5113DW1T1GCT-ND | 4656 | 1 | Cut Tape | ||||||||
| Flip Electronics | MUN5113DW1T1G | 135.000 | >1wk | |||||||||
| Newark | MUN5113DW1T1G | 0 | 3K | Cut Tape | ||||||||
| Onlinecomponents.com | MUN5113DW1T1G | 0 | 3K | Bulk |
Historial de existencias
Tendencia de 3 meses: -4.28%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN5113DW1T1G.
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.063
$ 0.044
Stock
2,221,308
106,018
Authorized Distributors
6
1
Mount
-
-
Case/Package
SOT-363-6
-
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
-
hFE Min
80
80
Power Dissipation
-
250 mW
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
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onsemiMUN5134DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
Descripciones
Descripciones de onsemi MUN5113DW1T1G suministradas por sus distribuidores.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Dual PNP Bipolar Digital Transistor (BRT)
MUN Series 50 V 100 mA 47 kOhm PNP Silicon Dual Bias Resistor Transistor SOT-363
2 PCS PNP Pre-Biased(Dual) 250mW 100mA 50V SOT-363 Digital Transistors ROHS
Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Brt Transistor, 50V, 47K/47Kohm, Sot-363; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Dc Collector Current:-100Ma; No. Of Pins:6 Rohs Compliant: Yes |Onsemi MUN5113DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low-power surface mount applications where board space is at a premium.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -4.28%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-100 mA
Current Rating-100 mA
Element ConfigurationDual
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityPNP
Schedule B8541210080
Voltage Rating (DC)-50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN5113DW1T1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento