onsemi MUN2232T1G
$ 0.041
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | MUN2232T1GOSCT-ND | 1939 | 1 | Cut Tape | ||||||||
| Avnet | MUN2232T1G | 18.000 | 42K | 14h | ||||||||
| Newark | MUN2232T1G | 2999 | 1 | Cut Tape | ||||||||
| Verical | MUN2232T1G | 4.167.000 | 18988 | |||||||||
| Arrow Electronics | MUN2232T1G | 278 | 1 |
Historial de existencias
Tendencia de 3 meses: -14.37%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN2232T1G.
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 Ultra Librarian | SímboloFootprint | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.041
$ 0.038
$ 0.038
Stock
14,615,353
2,255,171
2,255,171
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SC
SC
SC
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
250 mV
hFE Min
15
80
80
Power Dissipation
338 mW
338 mW
338 mW
Cadena de suministros
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi MUN2232T1G suministradas por sus distribuidores.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R
NPN Bipolar Digital Transistor (BRT)
MUN2232T1 Series 50 V 100 mA NPN Silicon Surface Mount Transistor - SC-59-3
MUN2232T1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 4.7 KOHM, RATIO OF 1, 3-PIN SC-59
ON SEMICONDUCTOR - MUN2232T1G - BRT TRANSISTOR, 50V, 4.7K/4.7KOHM, SC-59, FULL REEL
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
TRANS, AEC-Q101, PNP, -50V, -0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -14.37%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min15
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation338 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation338 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1.09 mm
Length2.9 mm
Width1.5 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN2232T1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento