onsemi MOC223M
$ 0.373
Production
Historial de existencias
Tendencia de 3 meses: -31.90%
Modelos CAD
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Componentes alternativos
1 piezas disponibles
Modelos CAD
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Este componente
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Price @ 1000
$ 0.373
$ 0.268
Stock
180,412
239,895
Authorized Distributors
6
6
Case/Package
SOIC
SOIC
Number of Pins
8
8
Number of Channels
1
1
Isolation Voltage
2500 Vrms
2500 Vrms
Current Transfer Ratio
500 %
500 %
Rise Time
3.5 µs
8 µs
Fall Time
-
110 µs
Output Voltage
30 V
-
Output Current
-
-
Forward Voltage
1.3 V
1.3 V
Forward Current
60 mA
60 mA
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2002-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi MOC223M suministradas por sus distribuidores.
Single Channel 30 V 2500 Vrms Surface Mount Transistor Output Optocoupler SOIC-8
Optocoupler DC-IN 1-Channel Darlington With Base DC Output 8-Pin SOIC N Box
The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic siliconphotodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dual-channel version of the MOC223M. They are ideallysuited for high density applications, and eliminates the need for through the board mounting.
OPTOCOUPLER, SMD; No. of Channels:1; Isolation Voltage:2.5kV; Optocoupler Output Type:Photodarlington; Input Current:1mA; Output Voltage:30V; Opto Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Approval Bodies:UL; Current Transfer Ratio Min:500%; External Depth:5.84mm; External Length / Height:3.18mm; External Width:6.1mm; Fall Time tf:95µs; Forward Current If(AV):1mA; Operating Temperature Range:-40°C to +100°C; Output Type:Photodarlington; Rise Time:3.5µs; Test Voltage:3000V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -31.90%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight252 mg
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)1 V
Current Transfer Ratio500 %
Dark Current50 nA
Forward Current60 mA
Forward Voltage1.3 V
Input Current1 mA
Isolation Voltage2500 Vrms
Max Collector Current150 mA
Max Input Current60 mA
Max Operating Temperature100 °C
Max Output Voltage30 V
Max Power Dissipation150 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output Current per Channel150 mA
Output Voltage30 V
PackagingBox
Power Dissipation250 mW
Reverse Breakdown Voltage6 V
Rise Time3.5 µs
Schedule B8541408000
Test Voltage3 kV
Dimensions
Width6.1 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento