onsemi MMUN2233LT1G

Bipolar Transistors (BJT); MMUN2233LT1G; ON SEMICONDUCTOR; NPN; 50 V; 100 mA; 3
$ 0.036
Production

Precio y existencias

Fichas técnicas y documentos

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Master Electronics

Datasheet12 páginasHace 9 años

IHS

onsemi

Newark

RS (Formerly Allied Electronics)

Historial de existencias

Tendencia de 3 meses:
-96.75%

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Componentes alternativos

Este componente
Componentes alternativos
Price @ 1000
$ 0.036
$ 0.025
Stock
12,808,433
685,488
Authorized Distributors
6
2
Mount
-
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
hFE Min
80
80
Power Dissipation
246 mW
200 mW

Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descripciones

Descripciones de onsemi MMUN2233LT1G suministradas por sus distribuidores.

Bipolar Transistors (BJT); MMUN2233LT1G; ON SEMICONDUCTOR; NPN; 50 V; 100 mA; 3
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
NPN SILICON BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN2233LT1G NPN DIGITAL TRANSISTOR,100MA 50V 4.7 KOHM, RATIO OF 0.1,3-PIN SOT-23
80@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
ON Semiconductor MMUN2233LT1G PNP MOSFET 50V 100mA SOT-23 Tape Reel Transistor
NPN Bipolar Digital Transistor (BRT)
Pre Biased Triodes NPN Ic=100mA Vceo=50V hfe=80 P=400mW SOT23
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
TRANSISTOR, RF, NPN, 50V, SOT-23-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm;
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

Alias de fabricantes

onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • MMUN2233LT1G.