onsemi MMUN2111LT1G
$ 0.029
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | MMUN2111LT1GOSCT-ND | 7877 | 1 | Cut Tape | ||||||||
| Future Electronics | MMUN2111LT1G | 510.000 | 3K | Tape & Reel | ||||||||
| Avnet | MMUN2111LT1G | 42.000 | 3K | 8h | ||||||||
| Newark | MMUN2111LT1G | 46.240 | 5 | Cut Tape | ||||||||
| Verical | MMUN2111LT1G | 7639 | 137 |
Historial de existencias
Tendencia de 3 meses: -25.88%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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Price @ 1000
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Stock
11,787,765
2,154,529
2,154,529
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
-
-
hFE Min
35
35
35
Power Dissipation
246 mW
246 mW
246 mW
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi MMUN2111LT1G suministradas por sus distribuidores.
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Transistor: PNP; bipolar; BRT; 50V; 0.1A; 246mW; SOT23; R1: 10k¦¸
Bipolar Transistors (BJT); MMUN2111LT1G; ON SEMICONDUCTOR; PNP; 3; 50 V; 100 mA
R1 = 10 KILO OHM, R2 = 10 KILO OHM PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-23
35@5mA,10V One PNP - Pre-Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
PNP Bipolar Digital Transistor (BRT)
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R
Pre Biased Triodes PNP Ic=100mA Vceo=50V hfe=35 P=400mW SOT23
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
TRANSISTOR, PNP, DIGITAL,-50V SOT-23; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -25.88%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityPNP
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MMUN2111LT1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento