onsemi MMBT3904LT1G
$ 0.034
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMBT3904LT1G | 7.236.000 | 3K | Tape & Reel | ||||||||
| Avnet | MMBT3904LT1G | 2.796.000 | 3K | 1d | ||||||||
| Newark | MMBT3904LT1G | 80.361 | 1 | Cut Tape | ||||||||
| Verical | MMBT3904LT1G | 21.458 | 13044 | |||||||||
| Arrow Electronics | MMBT3904LT1G | 105.468 | 1 |
Historial de existencias
Tendencia de 3 meses: -42.33%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
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Price @ 1000
$ 0.034
$ 0.034
$ 0.034
Stock
73,680,460
23,791,807
23,791,807
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
200 mV
300 mV
300 mV
hFE Min
30
30
30
Power Dissipation
225 mW
310 mW
310 mW
Cadena de suministros
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi MMBT3904LT1G suministradas por sus distribuidores.
TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 200MA, PD 225MW, SOT-23
200 mA, 40 V NPN Bipolar Junction Transistor
Bipolar Transistors (BJT); MMBT3904LT1G; ON SEMICONDUCTOR; NPN; 3; 40 V; 200 mA
40V 300mW 100@10mA,1V 200mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
NPN SILICON GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 40V 0.2A 300mW 3-Pin SOT-23 T/R
General Purpose Transistors VCEO=40V VEBO=6V IC=200mA NPN SOT23
TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transisto
Bipolar Transistor, Npn, 40V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:200Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBT3904LT1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 200 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 30 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 950 / Reflow Temperature Max. °C = 260
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -42.33%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency300 MHz
TypeGeneral Purpose
Voltage Rating (DC)40 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento