onsemi MMBT2222ATT1G
$ 0.037
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMBT2222ATT1G | 1.539.000 | 3K | Tape & Reel | ||||||||
| Avnet | 10N9479 | 10.994 | 1 | 5h | ||||||||
| Newark | MMBT2222ATT1G | 10.994 | 1 | Cut Tape | ||||||||
| Master Electronics | MMBT2222ATT1G | 57.000 | 3K | |||||||||
| Onlinecomponents.com | MMBT2222ATT1G | 57.000 | 3K | Bulk |
Historial de existencias
Tendencia de 3 meses: -15.55%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MMBT2222ATT1G.
Modelos CAD
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|---|---|---|---|
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Price @ 1000
$ 0.037
$ 0.036
$ 0.036
Stock
10,194,671
115,936,590
115,936,590
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-416
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
1 V
300 mV
300 mV
hFE Min
40
75
75
Power Dissipation
150 mW
225 mW
225 mW
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi MMBT2222ATT1G suministradas por sus distribuidores.
Bipolar Transistors (BJT); MMBT2222ATT1G; ON SEMICONDUCTOR; NPN; 40 V; 600 mA; 3
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 150 mW, SOT-416, Surface Mount
ON Semi MMBT2222ATT1G NPN Bipolar Transistor; 0.6 A; 40 V; 3-Pin SOT-416
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 150mW 100@150mA,10V 600mA NPN SOT-523(SC-75) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SC-75
NPN Bipolar Junction Transistor
1V@ 50mA,500mA NPN 150mW 6V 10nA 75V 40V 600mA SC-75,SOT-416 1.6mm*800¦Ìm*800¦Ìm
General Purpose Transistors NPN Silicon Ic=600mA Vceo=40V P=150mW SOT416
TRANSISTOR, NPN, 40V, 600MA, SOT-416-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE;
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications.
BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -15.55%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-416
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min40
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)75 V
Dimensions
Height800 µm
Length1.65 mm
Width900 µm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MMBT2222ATT1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento