Descripciones de onsemi MBRS1100T3G suministradas por sus distribuidores.
DIODE, SCHOTTKY BARRIER, VR 100V, IF 1A, PKG SMB, VF 0.75V, TJ +175DEGC, CS 50A, IR 5MA
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA
Rectifier Diode Schottky Si 100V 2A 2-Pin SMB T/R / DIODE SCHOTTKY 100V 1A SMB
ON Semiconductor MBRS1100T3G Schottky diode SMB package efficient design
onsemi Schottky Diodes Diodes, 2A, 100V, surface mount, DO-214AA (SMB)encapsulation, 2needle
MBRS1100T3G Series 1 A 100 V Schottky Barrier Rectifier
Schottky Rectifier, 100 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 750 mV
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry
DIODE, SCHOTTKY, 1A, 100V, SMB; Repetitive Reverse Voltage Vrrm Max: 100V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: DO-214AA; No. of Pins: 2Pins; Forward Voltage VF Max: 750mV; Forward Surge C
Configuration = Single / Peak Average Forward Current (If(AV)) A = 1 / Reverse Repetitive Voltage Max. (Vrrm) V = 100 / Forward Voltage (Vf) mV = 750 / Reverse Current Max. uA = 500 / Peak Non-Repetitive Surge Current (Itsm) A = 50 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 175 / Package Type = DO-214AA / Pins = 2 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Thermal Resistance W/°C = 22 / Reflow Temperature Max. °C = 260