onsemi HGTG30N60B3
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Fichas técnicas y documentos
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Price @ 1000
$ 4.67
Stock
218,820
102
Authorized Distributors
0
1
Mount
Through Hole
-
Case/Package
TO-247
TO-247
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
60 A
60 A
Power Dissipation
208 W
-
Collector Emitter Saturation Voltage
1.45 V
-
Reverse Recovery Time
-
-
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Descripciones
Descripciones de onsemi HGTG30N60B3 suministradas por sus distribuidores.
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V N-Channel IGBT UFS Series
IGBT UFS N-CHAN 600V 60A TO-247
FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
Ptpigbt To247 30A 600V Rohs Compliant: Yes
60 A 600 V N-CHANNEL IGBT TO-247
TRANSISTOR, IGBT; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Package / Case:TO-247; Power Dissipation Max:208W; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.45V
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.45 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current60 A
Current Rating60 A
Element ConfigurationSingle
Fall Time150 ns
Max Breakdown Voltage600 V
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation208 W
Schedule B8541290080
Voltage Rating (DC)600 V
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi HGTG30N60B3.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento