onsemi HGTG20N60B3
$ 2.64
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Price @ 1000
$ 2.64
$ 1.33
Stock
206,213
27,882
Authorized Distributors
4
1
Mount
Through Hole
-
Case/Package
TO-247-3
TO-247
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
40 A
40 A
Power Dissipation
165 W
-
Collector Emitter Saturation Voltage
1.8 V
-
Reverse Recovery Time
-
-
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-02
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Descripciones
Descripciones de onsemi HGTG20N60B3 suministradas por sus distribuidores.
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2V @ 15V 20A 40A 165W 360ns
HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247
40A, 600V, UFS Series N-Channel IGBTs | IGBT 600V 40A 165W TO247
Trans IGBT Chip N-CH 600V 40A 165W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes |Onsemi HGTG20N60B3..
PWR IGBT UFS 20A 600V TF<200NS N-CH TO-247
IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
165W 1.8V 600V 40A TO-247-3 15.87mm*20.82mm*4.82mm
IGBT, 40A, 600V, N-CHANNEL, TO-2
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current40 A
Current Rating40 A
Element ConfigurationSingle
Fall Time175 ns
Max Collector Current40 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation165 W
Min Operating Temperature-40 °C
Number of Elements1
PolarityNPN
Power Dissipation165 W
Schedule B8541290080
Turn-Off Delay Time220 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)600 V
Dimensions
Height24.75 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento