onsemi HGTG12N60A4
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | HGTG12N60A4 | 0 | 300 | |||||||||
| Avnet | HGTG12N60A4 | 0 | 300 | 1d | ||||||||
| Win Source | WS-HGTG12N60A4 | 2000 | 8 | 13h | ||||||||
| Worldway Electronics | HGTG12N60A4 | 16.868 | 7 | Tube | 12h | |||||||
| Anlinkda | HGTG12N60A4 | 29.863 | 18h |
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi HGTG12N60A4.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-08-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
Componentes relacionados
STMicroelectronicsSTGW20H60DF
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsSTGW30NC60WD
Transistor IGBT Chip N-Channel 600 Volt 60A 3-Pin(3+Tab) TO-247
STMicroelectronicsSTGW20V60DF
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Descripciones
Descripciones de onsemi HGTG12N60A4 suministradas por sus distribuidores.
Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail
600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO247
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
Single Igbt, 600V, 54A; Corriente De Colector Dc:54A; Tensión De Saturación Colector-Emisor Vce(On):2V; Disipación De Potencia Pd:167W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:3; Temperatura De Trabajo Máx.:150°C |Onsemi HGTG12N60A4
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.7 V
Collector Emitter Voltage (VCEO)600 V
Current Rating54 A
Element ConfigurationSingle
Fall Time95 ns
Max Collector Current54 A
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Rise Time8 ns
TerminationThrough Hole
Voltage Rating (DC)600 V
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi HGTG12N60A4.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento