onsemi FQT1N60CTF-WS
$ 0.364
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FQT1N60CTF-WS | 0 | 1 | Cut Tape | ||||||||
| Avnet | FQT1N60CTF-WS | 0 | 4K | 11h | ||||||||
| element14 APAC | FQT1N60CTF-WS | 0 | 1 | Cut Tape | 22h | |||||||
| Farnell | FQT1N60CTF-WS | 0 | 1 | Cut Tape | 9h | |||||||
| Component Stockers USA | FQT1N60CTF-WS | 5590 | >1wk |
Historial de existencias
Tendencia de 3 meses: -8.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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|---|---|---|---|
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Cadena de suministros
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-20
Lifecycle StatusEOL (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
Componentes relacionados
InfineonBSP125 L6327
MOSFET, N-CH, 600V, 120MA, SOT-223; Transistor Polarity:N Channel; Continuous Dr
Descripciones
Descripciones de onsemi FQT1N60CTF-WS suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223
N-Channel 600 V 11.5 Ohm Surface Mount Mosfet - SOT-223
N-Channel QFET® MOSFET 600V, 0.2A, 11.5Ω, SOT-223 4L, 16000-TAPE REEL
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R
MOSFET, N-CH, 600V, 0.2A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 9.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -8.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-223-4
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance11.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance170 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.1 W
Rds On Max11.5 Ω
Resistance11.5 Ω
Rise Time21 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time13 ns
Turn-On Delay Time7 ns
Dimensions
Height1.91 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento