onsemi FQPF7N65CYDTU
$ 0.609
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -0.10%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-06-02
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
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onsemiFQPF8N60CYDTU
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Descripciones
Descripciones de onsemi FQPF7N65CYDTU suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 650 V, 7 A, 1.4 Ω, TO-220F
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Rail
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -0.10%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight2.565 g
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.245 nF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation52 W
Rds On Max1.4 Ω
Rise Time50 ns
Schedule B8541290080
Turn-Off Delay Time90 ns
Turn-On Delay Time20 ns
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento