onsemi FQPF8N60C
$ 0.88
EOL
Precio y existencias
Distribuidores autorizados
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQPF8N60C | 595 | 319 | |||||||||
| Avnet | FQPF8N60C | 460 | 1137 | 6h | ||||||||
| Rochester Electronics | FQPF8N60C | 43.107 | 4h | |||||||||
| Flip Electronics | FQPF8N60C | 460 | 6d | |||||||||
| Win Source | WS-FQPF8N60C | 9820 | 100 | 5h |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-05-21
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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Descripciones
Descripciones de onsemi FQPF8N60C suministradas por sus distribuidores.
Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220F
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Rail
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
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Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)7.5 A
Current Rating7.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time64.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.255 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation48 W
Rds On Max1.2 Ω
Rise Time60.5 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time81 ns
Turn-On Delay Time16.5 ns
Voltage Rating (DC)600 V
Dimensions
Height16.61 mm
Length10.16 mm
Width4.7 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQPF8N60C.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento