onsemi FQP7P06
$ 0.687
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -14.29%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Componentes relacionados
Descripciones
Descripciones de onsemi FQP7P06 suministradas por sus distribuidores.
Power MOSFET, P-Channel, QFET®, -60 V, -7 A, 410 mΩ, TO-220
Trans MOSFET P-CH 60V 7A 3-Pin(3+Tab) TO-220AB Rail
P-Channel 60 V 7 A 0.41 Ohm Mosfet - TO-220
60V P-CHANNEL MOSFET Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-7A; Current Temperature:25°C; Device Marking:FQP7P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:410mohm; Package / Case:TO-220; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-25V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -14.29%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)7 A
Current Rating-7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance410 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance295 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max410 mΩ
Resistance410 MΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time7.5 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-60 V
Dimensions
Height20.4 mm
Length10.1 mm
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento