onsemi FQP13N50

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
$ 1.17
EOL
Página del fabricanteFicha técnica

Precio y existencias

Ver todas las estructuras de precios
DistributorSKUMinPkg
Rochester ElectronicsFQP13N5038
3h
Farnell
2
FQP13N5001
1d
element14 APACFQP13N5001
17h
Win SourceWS-FQP13N50518724
4h
Worldway ElectronicsFQP13N5025.5787Tube
3h

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para onsemi FQP13N50.

IHS

Datasheet8 páginasHace 12 años

element14 APAC

Factory Futures

onsemi

Farnell

Historial de existencias

Tendencia de 3 meses:
+0.00%
Powered bySpectra logo

Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-23
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-21
LTD Date2022-12-21
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

Componentes relacionados

STMicroelectronicsSTP15NK50Z
N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220
Detalles
STMicroelectronicsSTP12NM50
Transistor MOSFET N Channel 500 Volt 12 Amp 3 Pin 3+ Tab TO-220 Tube
Detalles
STMicroelectronicsSTP13NK60Z
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
Detalles

Descripciones

Descripciones de onsemi FQP13N50 suministradas por sus distribuidores.

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
onsemi
Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail
Avnet
N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220
Future Electronics
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
element14 APAC
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Imágenes

element14 APAC
TME
Farnell
iiiC
Future Electronics
Conrad
Rochester Electronics

Alias de fabricantes

onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • FQP13N50.