onsemi FQD8P10TM-F085
$ 0.537
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FQD8P10TM-F085 | 784 | 5 | Cut Tape | ||||||||
| Verical | FQD8P10TM_F085 | 4950 | 150 | |||||||||
| Arrow Electronics | FQD8P10TM-F085 | 1839 | 1 | |||||||||
| Future Electronics | FQD8P10TM-F085 | 10.000 | 2500 | Tape & Reel | ||||||||
| Master Electronics | FQD8P10TM-F085 | 4950 | 50 |
Historial de existencias
Tendencia de 3 meses: -17.83%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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|---|---|---|---|
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Componentes alternativos
Este componente
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Price @ 1000
$ 0.537
$ 0.36
Stock
583,827
959,207
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
6.6 A
6.6 A
Threshold Voltage
-
-4 V
Rds On Max
530 mΩ
530 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
470 pF
470 pF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-20
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
Descripciones
Descripciones de onsemi FQD8P10TM-F085 suministradas por sus distribuidores.
P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R
MOSFETs; FQD8P10TM-F085; ON SEMICONDUCTOR; -6.6 A; -100 V; 30 V; 2.5 W
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, P沟道, 100V, 6.6A, 150度 C, 44W;
-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®
MOSFET, P-CH, 100V, 6.6A, TO-252;
2.5W(Ta),44W(Tc) 30V 4V@ 250¦ÌA 15nC@ 10 V 1P 100V 530m¦¸@ 3.3A,10V 6.6A 470pF@25V TO-252AA 6.73mm*6.22mm*2.39mm
FQD8P10TM_F085 Fairchild/ON Semiconductor
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -17.83%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)6.6 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance530 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance470 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.5 W
Rds On Max530 mΩ
Resistance530 MΩ
Rise Time110 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time11 ns
Dimensions
Height2.517 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQD8P10TM-F085.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento