onsemi FQD10N20LTM
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FQD10N20LTM | 0 | 1 | Cut Tape | 1d | |||||||
| element14 APAC | FQD10N20LTM | 0 | 1 | Cut Tape | 21h | |||||||
| Weyland Electronics Group Pte. Ltd. | FQD10N20LTM | 4430 | 1 | Tape & Reel | 10h | |||||||
| Win Source | WS-FQD10N20LTM | 6000 | 18 | 8h | ||||||||
| Worldway Electronics | FQD10N20LTM | 9457 | 7 | Tape & Reel | 7h |
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQD10N20LTM.
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FQD10N20LTM desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.432
Stock
185,975
966,201
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
7.6 A
9 A
Threshold Voltage
-
2 V
Rds On Max
360 mΩ
280 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
830 pF
1.08 nF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-13
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descripciones
Descripciones de onsemi FQD10N20LTM suministradas por sus distribuidores.
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK
FQD10N20L Series 200 V 7.6 A 360 mO N-Channel QFET MOSFET - TO-252-3
Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R
MOSFET, N-CH, 200V, 7.6A, 150DEG C, 51W; Available until stocks are exhausted Alternative available
TAPE REEL/N-CH/LL/200V/7.6A/0.36OHM@VGS=10V/0.38OHM@VGS=5V
场效应管, MOSFET, N沟道, 200V, 7.6A, 150度 C, 51W;
MOSFETs 200V N-Ch QFET Logic Level
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.6 A
Current Rating7.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance830 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation51 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max360 mΩ
Resistance380 MΩ
Rise Time150 ns
Schedule B8541290080
Turn-Off Delay Time50 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)200 V
Dimensions
Height2.517 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQD10N20LTM.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento