onsemi FGH30N60LSDTU

FGH30N60LSD Series 600 V 60 A MOS Gated High Voltage IGBT Switching - TO-247
$ 7.24
EOL

Precio y existencias

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para onsemi FGH30N60LSDTU.

IHS

Datasheet9 páginasHace 6 años
Datasheet9 páginasHace 12 años

Future Electronics

Fairchild Semiconductor

element14 APAC

iiiC

Historial de existencias

Tendencia de 3 meses:
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Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-08-06
Lifecycle StatusEOL (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

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Descripciones

Descripciones de onsemi FGH30N60LSDTU suministradas por sus distribuidores.

FGH30N60LSD Series 600 V 60 A MOS Gated High Voltage IGBT Switching - TO-247
Trans IGBT Chip N=-CH 600V 60A 480000mW 3-Pin(3+Tab) TO-247 Tube
Using Fairchild's planar technology, the FGH30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.
IGBT,N CH,FAST,W/DIO,600V,60A,TO247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:480W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:480W

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