onsemi FDP20N50F

N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 20 A, 260 mΩ, TO-220

Single N-Channel 500 V 0.26 Ohm 65 nC 250 W DMOS Flange Mount Mosfet - TO-220-3

Power Field-Effect Transistor, 20A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

250W(Tc) 30V 5V@ 250µA 65nC@ 10 V 1individualNChannel 500V 260mΩ@ 10A,10V 20A 3.39nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm

MOSFET, N CH, 500V, 20A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.