onsemi FDP20N50

Transistor MOSFET N Channel 500 Volt 20 Amp 3-Pin 3+ Tab TO-220 Rail

N-Channel Power MOSFET, UniFETTM, 500 V, 20 A, 230 mΩ, TO-220

250W(Tc) 30V 5V@ 250¦ÌA 59.5nC@ 10 V 1N 500V 230m¦¸@ 10A,10V 20A 3.12nF@25V TO-220-3 9.4mm

N-Channel 500 V 0.23 Ohm Flange Mount Mosfet - TO-220

Power Field-Effect Transistor, 20A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):230mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Package / Case:TO-220; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:80A; Repetitive Avalanche Energy Max:25mJ; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.