onsemi FDME410NZT
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FDME410NZT | 0 | 1 | 7h | ||||||||
| Microchip USA | FDME410NZT | 211 | 3500 | Tray | 1d | |||||||
| Component Stockers USA | FDME410NZT | 723 | 3d | |||||||||
| Win Source | WS-FDME410NZT | 20 | 110 | 8h | ||||||||
| Worldway Electronics | FDME410NZT | 28.040 | 7 | Tape & Reel | 1d |
Cadena de suministros
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-02-15
LTD Date2020-08-15
Descripciones
Descripciones de onsemi FDME410NZT suministradas por sus distribuidores.
N-Channel PowerTrench® MOSFET 20V, 7A, 26mΩ
N-Channel 20 V 7 A 14 mOhm Power Trench® Mosfet - MicorFET
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on) @ VGS = 1.5 V on special MicroFET leadframe.
MOSFET, N CH, 20V, 7A, MFET1.6X1.6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins6
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.025 nF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Elements1
Power Dissipation1.4 W
Rds On Max26 mΩ
Rise Time3.4 ns
Threshold Voltage700 mV
Turn-Off Delay Time27 ns
Turn-On Delay Time7.3 ns
Dimensions
Height500 µm
Length1.6 mm
Width1.6 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento