onsemi FDMA3023PZ
$ 0.382
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDMA3023PZ | 36.000 | 3K | 2d | ||||||||
| Future Electronics | FDMA3023PZ | 3000 | 3K | Tape & Reel | ||||||||
| DigiKey | FDMA3023PZCT-ND | 2382 | 1 | Cut Tape | ||||||||
| Flip Electronics | FDMA3023PZ | 36.964 | 1d | |||||||||
| Newark | FDMA3023PZ | 0 | 3K | Tape & Reel |
Historial de existencias
Tendencia de 3 meses: -29.55%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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|---|---|---|---|
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDMA3023PZ suministradas por sus distribuidores.
Dual P-Channel PowerTrench® MOSFET -30V , -2.9A, 90mΩ
FDMA3023 Series -30 V -2.9 A 90 mOhm Dual P-Ch. PowerTrench® MOSFET - MicroFET-6
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
MOSFET, PP CH, 30V, 2.9A, MICROFET2X2; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.071ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -29.55%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)2.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationDual
Fall Time4 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance530 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels2
Number of Elements2
Power Dissipation1.4 W
Rds On Max90 mΩ
Resistance90 MΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time62 ns
Turn-On Delay Time5 ns
Dimensions
Height850 µm
Length2 mm
Width2 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento