onsemi FDMA1032CZ
$ 0.29
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDMA1032CZ | 15.000 | 3K | 2d | ||||||||
| Future Electronics | FDMA1032CZ | 6000 | 3K | Tape & Reel | ||||||||
| Newark | FDMA1032CZ | 4 | 5 | Cut Tape | ||||||||
| Rochester Electronics | FDMA1032CZ | 1000 | 16h | |||||||||
| Flip Electronics | FDMA1032CZ | 2558 | 1d |
Historial de existencias
Tendencia de 3 meses: -63.66%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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|---|---|---|---|
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 EE Concierge | SímboloFootprint | ||
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-05-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDMA1032CZ suministradas por sus distribuidores.
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm
Trans MOSFET N/P-CH 20V 3.7A/3.1A 6-Pin MicroFET EP T/R
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.068ohm; Rds(on) Test Voltage, Vgs:1V; Threshold Voltage, Vgs Typ:12V; Package/Case:6-MicroFET ;RoHS Compliant: Yes
This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -63.66%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance68 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time11 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance340 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
Power Dissipation700 mW
Rds On Max68 mΩ
Resistance68 mΩ
Rise Time11 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time37 ns
Voltage Rating (DC)20 V
Dimensions
Height850 µm
Length2 mm
Width2 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDMA1032CZ.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento