onsemi FDME1034CZT
$ 0.357
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FDME1034CZT | 0 | 5K | Tape & Reel | ||||||||
| Onlinecomponents.com | FDME1034CZT | 0 | 100 | Bulk | ||||||||
| Master Electronics | FDME1034CZT | 0 | 100 | |||||||||
| Avnet | FDME1034CZT | 0 | 5K | 2d | ||||||||
| Future Electronics | FDME1034CZT | 0 | 5K | Tape & Reel |
Historial de existencias
Tendencia de 3 meses: -88.64%
Modelos CAD
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Componentes alternativos
0 piezas disponibles
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDME1034CZT suministradas por sus distribuidores.
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.055 ohm
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,NP CH,W,20V,MICROFET1.6X1.6; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.4W
This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -88.64%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight25.2 mg
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance66 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time16 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance300 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels2
Number of Elements2
Power Dissipation1.4 W
Rds On Max66 mΩ
Rise Time4.8 ns
Schedule B8541290080
Threshold Voltage700 mV
Turn-Off Delay Time33 ns
Dimensions
Height550 µm
Length1.6 mm
Width1.6 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento