onsemi FDG6301N_F085
Precio y existencias
Distribuidores autorizados
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2008-10-29
Descripciones
Descripciones de onsemi FDG6301N_F085 suministradas por sus distribuidores.
Transistor MOSFET Array Dual N-CH 25V 0.22A 6-Pin SC-70 T/R
N-Channel Power Mosfet - 6LD,SC70,EIAJ SC-88,1.25MM WIDE
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDG6301N_F085 Fairchild/ON Semiconductor
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Fall Time3.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Power Dissipation300 mW
Rds On Max4 Ω
Rise Time4.5 ns
Schedule B8541210080
Turn-Off Delay Time4 ns
Turn-On Delay Time5 ns
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDG6301N_F085.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento