onsemi FDD6680AS

N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
$ 0.594
Obsolete
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
Verical
2
FDD6680AS6993472
Rochester Electronics
2
FDD6680AS9341
23h
element14 APAC
2
FDD6680AS01Cut Tape
13h
Farnell
2
FDD6680AS01Cut Tape
1d
Win SourceWS-12913624.20075
1d

Fichas técnicas y documentos

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Technical Drawing1 páginasHace 3 años

IHS

Future Electronics

onsemi

Farnell

Historial de existencias

Tendencia de 3 meses:
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Componentes alternativos

Este componente
Componentes alternativos
onsemiFDD6680AS
onsemiFDD6680S
Price @ 1000
$ 0.594
$ 1.328
Stock
247,847
236,264
Authorized Distributors
4
3
Mount
Surface Mount
-
Case/Package
TO-252
TO-252
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
55 A
55 A
Threshold Voltage
1.4 V
-
Rds On Max
10.5 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.3 W
60 W
Input Capacitance
1.2 nF
-

Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-24
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descripciones

Descripciones de onsemi FDD6680AS suministradas por sus distribuidores.

N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
onsemi
N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK
Future Electronics
Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
element14 APAC
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
Fairchild Semiconductor

Imágenes

TME
element14 APAC
iiiC
iiiC
Rochester Electronics

Alias de fabricantes

onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd