onsemi FDD6612A
$ 0.466
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -0.95%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDD6612A.
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.466
$ 0.617
Stock
1,642,614
16,800
Authorized Distributors
2
2
Mount
Surface Mount
-
Case/Package
TO-252
TO-252
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
9.5 A
20 A
Threshold Voltage
2 V
-
Rds On Max
20 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
36 W
50 W
Input Capacitance
660 pF
-
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Componentes relacionados
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Single P-Channel 30 V 8.7 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
Descripciones
Descripciones de onsemi FDD6612A suministradas por sus distribuidores.
N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ
N-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3
30V N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -0.95%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9.5 A
Current Rating30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Operating Temperature175 °C
Max Power Dissipation36 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
PackagingTape & Reel
Power Dissipation36 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time5 ns
Threshold Voltage2 V
Turn-Off Delay Time24 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FDD6612A.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento