onsemi FCP11N60N
$ 1.28
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Ultra Librarian | SímboloFootprint | Descargar |
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-06
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Descripciones
Descripciones de onsemi FCP11N60N suministradas por sus distribuidores.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220
FCH47N60 Series 600 V 0.38 Ohms Flange Mount N-Channel MOSFET - TO-220
Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
94W(Tc) 30V 4V@ 250µA 35.6nC@ 10V 1individualNChannel 600V 299mΩ@ 5.4A,10V 10.8A 1.505nF@100V TO-220-3 Through hole mounting 9.4mm(height)
MOSFET,N CH,600V,10.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)10.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.505 nF
Max Operating Temperature150 °C
Max Power Dissipation94 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation94 W
Rds On Max299 mΩ
Resistance380 MΩ
Rise Time9.1 ns
Threshold Voltage2 V
Turn-Off Delay Time42 ns
Turn-On Delay Time13.6 ns
Dimensions
Height15.9 mm
Length10.16 mm
Width4.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento